Nonlinear neural networks, motion sensing and fractional charge detection with silicon p-i-n structures at 4.2 K.

摘要

A model has been constructed to predict interpulse time intervals (IPTI) of current spikes of spontaneous pulsing Si p-i-n diodes at 4.2K. The model yields an iterative formula of the form ;A search has been conducted for unconfined primordial fractional charges (FCP) and FCP's created during high energy collisions. The search is based on fractional charge impurity energy level predictions of Chaudhuri et al., (P. R. L. 1374, 45 1980) in Si p-i-n diodes and (for the created FCP's) those properties described by A. De Rujula et al. (Phys. Rev. D, 285, 17 (1978)). An upper limit (95% C.L.) of 2.3 ;Circuits which can both detect transient light signals and also show lateral inhibition and integration of temporal signals, have been constructed with spontaneously pulsing Si p-i-n diodes. The experimental output of these circuits agree with a model based on simple circuit equations. The circuits have been shown to have equivalent units in the lamina and medulla of the fly eye.