Depot de tungstene induit par laser excimere sur l'arseniure de gallium.

摘要

e have developed a laser-CVD process for the deposition of tungsten on GaAs. The deposition of the W thin films is induced by a KrF excimer laser incident perpendicularly to a GaAs substrate placed in a high vacuum cell containing a gaseous mixture consisting of WF;In-situ XPS analysis shows evidence of a surface interaction between WF;The interaction between WF;By using SiH;SEM analysis of the deposited W films shows a dense and regular columnar structure. Auger depth profiles indicate that the deposited W is pure. No impurities such as F, C or O are observed, with a detection limit of 1%. Thus, inter-diffusion between the metal and the substrate is minimal. X-ray diffraction shows that the deposited W is mostly in its stable, highly conducting ;Laser direct-projection patterning of 60