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Magneto-transport study of disordered electron systems in a gallium arsenide heterojunction.

机译:砷化镓异质结中无序电子系统的磁输运研究。

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摘要

A systematic transport study of the role of disorder in the quantum Hall effect is presented. The device used for this study is a disorder-tuned two-dimensional electron gas in a Gallium Arsenide-Aluminum Gallium Arsenide heterostructure, and the measurements were taken at ultra-low temperatures, down to 50 mK. When deeply in the variable-range hopping regime, this system has a giant negative magnetoresistance at low magnetic fields, where reduction of the resistance with application of magnetic field can be as large as a factor of 15. It is shown that this effect is orbital in origin. The crossover from negative to positive magnetoresistance was found to occur at complete filling of the lowest spin-unresolved Landau level, i.e., when {dollar}nu{dollar} = 2. The Hall coefficient was also studied. For vanishing temperature in the Anderson insulating regime, the sample is characterized by vanishing longitudinal and transverse conductivities and diverging longitudinal resistivity, but the transverse resistivity remains finite and equal to its classical value. Hence, the density found from the classical Hall coefficient is not a measure of extended carriers. A system exhibiting this type of behavior was termed a Hall insulator. A transition from an Anderson insulator at low and high magnetic fields to a quantum Hall liquid in the intermediate region of {dollar}nu{dollar} = 2 was observed. For vanishing temperature the longitudinal resistivity diverges in insulating regime and the longitudinal resistivity vanishes in the quantum Hall liquid regime. While in quantum Hall liquid regime the sample is characterized by a well-defined Hall plateau of value {dollar}h/2esp2{dollar} A comparison to the global phase diagram is made. The positions of the extended states in the density-magnetic field plane have been investigated. Strong upward deviation of the delocalized states from their traditional Landau level positions at low magnetic fields was seen. An analysis of this result is given in terms of the so called "floating" equation.
机译:对无序在量子霍尔效应中的作用进行了系统的输运研究。用于这项研究的设备是砷化镓-铝砷化镓异质结构中的无序调谐二维电子气,测量是在低至50 mK的超低温下进行的。当深处在可变范围跳变状态时,该系统在低磁场下具有巨大的负磁阻,其中施加磁场时电阻的减小可能高达15倍。表明该效应是轨道的起源。发现从负磁阻到正磁阻的交叉发生在最低自旋未分辨的朗道能级的完全填充时,即当{dol} nu {dollar} = 2时。还研究了霍尔系数。对于在安德森绝缘状态下的温度消失,样品的特征在于纵向和横向电导率消失并且纵向电阻率发散,但是横向电阻率保持有限并且等于其经典值。因此,从经典霍尔系数得出的密度不是扩展载波的量度。表现出这种类型行为的系统称为霍尔绝缘体。观察到在低和高磁场下从安德森绝缘子到在{nul} nu {dollar} = 2的中间区域中的量子霍尔液体的跃迁。对于消失的温度,纵向电阻率在绝缘状态下发散,并且纵向电阻率在量子霍尔液体状态下消失。在量子霍尔液体状态下,样品的特征在于明确定义的霍尔高原,其值{dol} h / 2esp2 {dol}与全局相图进行了比较。已经研究了扩展状态在密度磁场平面中的位置。在低磁场下,可以看到离域状态从其传统的Landau能级位置强烈向上偏离。根据所谓的“浮动”方程式对该结果进行了分析。

著录项

  • 作者

    Johnson, Charles Erik.;

  • 作者单位

    University of California, Los Angeles.;

  • 授予单位 University of California, Los Angeles.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 1995
  • 页码 98 p.
  • 总页数 98
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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