Design of automatic feedback for tailored field FETs.

摘要

This research was focused on the design of the feedback circuit, which can automatically control the electric field inside the channel of the multi-gate Field Effect Transistor (FET). Such circuits have been successfully designed and tested for the Metal-Semiconductor Field Effect Transistor (MESFET) and for the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Theoretical computer modeling has been performed to support the idea of controlling the electric field inside the channel of the FET. Simulations show that the separate control of the gate biases of the dual-gate FET can lead to a more uniform electric field, which in turn leads to a better current-voltage characteristics of the transistor. The experimental results show that the current-voltage characteristics of the dual-gate FETs with the automatic feedback circuit display better drain current saturation and more uniform transconductance than the same transistors without the automatic feedback circuit.