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Substrate roughness effect in cobalt chromium(boron, palladium, platinum, tantalum) longitudinal magnetic storage media.

机译:钴铬(硼,钯,铂,钽)纵向磁存储介质中的基底粗糙度效应。

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摘要

This work examines the influences of mechanical textures of substrate surface in the range of 2 Å to 50 Å and magnetic layer compositions on the structure and magnetic properties of longitudinal magnetic storage media. Prior to magnetic layer deposition, 460 Å thick Cr or Cr 80V20 underlayers with (200) texture were deposited on the Al-Mg/NiP substrates in order to facilitate epitaxial growth of (112¯0) oriented Co alloy magnetic layer. Magnetic layers were based on Co alloy films with ternary and quaternary additions of Pt, Pd, Ta, and B. The crystallographic orientation, magnetic properties and surface morphology of the films were investigated using x-ray diffraction, vibrating sample magnetometry and atomic force microscopy, respectively.; Direct-current (DC) magnetron thin film deposition conditions favoring the growth of (200) textured Cr film and subsequent epitaxial growth of (112¯0) textured Co alloy layer were first determined. Use of Cr80V 20 underlayer, in general, reduced lattice misfit with the magnetic layer and increased the magnetic film coercivities.; Substitution of 4.5 at.% Co with Pd or Pt in Co83Cr17 film reduced the coercivity and increased exchange coupling between grains. Though, the lattice dilations were similar and the grain size was smaller, the coercivity of Co78.5Cr17Pd4.5 film was lower than that of Co78.5Cr17Pt4.5 film. Ta and Cr on the other hand tended to decrease the exchange coupling and increase coercivity. Substitution of 2 at.% Co with B in Co83Cr 17 film resulted in a small increase in exchange coupling and a large decrease in coercivity. However, B addition to Co78.5Cr 17Pt4.5 film increased the coercivity.; The coercivity, ratio of coercivities in the circumferential and radial directions, and remanent-thickness product increase with the substrate surface roughness in the roughness range of 2 Å to 10 Å. The Co75.5 Cr17Pt4.5Ta3 films deposited on the 2 Å, 4 Å, 10 Å, and 50 Å rough substrates show that exchange coupling decreases with surface roughness in the range of 50 Å to 4 Å and increases on further decrease of roughness to 2 Å.
机译:这项工作研究了2到50范围内的基板表面机械纹理和磁性层组成对纵向磁存储介质的结构和磁性能的影响。在沉积磁性层之前,将具有(200)织构的460厚Cr或Cr 80 V 20 底层沉积在Al-Mg / NiP衬底上,以促进外延(112’0)取向Co合金磁性层的生长。磁性层是基于Co合金膜,其中Pt,Pd,Ta和B三元和四元添加。使用X射线衍射,振动样品磁力分析和原子力显微镜研究了膜的晶体学取向,磁性和表面形态。 , 分别。;首先确定有利于(200)织构化Cr膜的生长以及随后(112’0)织构化Co合金层的外延生长的直流(DC)磁控管薄膜沉积条件。通常,使用Cr 80 V 20 底层可减少与磁性层的晶格失配并提高磁性膜的矫顽力。 Co 83 Cr 17 膜中的4.5at。%Co被Pd或Pt取代会降低矫顽力并增加晶粒之间的交换耦合。虽然,它们的晶格膨胀相似并且晶粒尺寸较小,但Co 78.5 Cr 17 Pd 4.5 薄膜的矫顽力低于Co 78.5 Cr 17 Pt 4.5 薄膜。另一方面,Ta和Cr倾向于降低交换耦合并提高矫顽力。 Co 83 Cr 17 膜中的B取代2 at。%Co导致交换耦合增加很小,矫顽力大大降低。然而,在Co 78.5 Cr 17 Pt 4.5 薄膜中添加硼可提高矫顽力。矫顽力,在圆周和径向上的矫顽力比以及剩余厚度乘积随基板表面粗糙度在2到10范围内而增加。沉积在2Å,4Å,10Å上的Co 75.5 Cr 17 Pt 4.5 Ta 3 薄膜在50埃和50埃粗糙衬底上,交换耦合随着表面粗糙度在50埃至4埃范围内的减小而减小,而在粗糙度进一步减小至2埃的范围内增大。

著录项

  • 作者

    Tarakci, Mehmet.;

  • 作者单位

    The University of Utah.;

  • 授予单位 The University of Utah.;
  • 学科 Physics Electricity and Magnetism.; Engineering Metallurgy.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2001
  • 页码 183 p.
  • 总页数 183
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 电磁学、电动力学;冶金工业;工程材料学;
  • 关键词

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