Ensemble Monte Carlo aided modeling of sub-micron electronic devices.

摘要

Over the last three decades, the growth of very-large-scale integration (VLSI) is very rapidly, and the application of circuits and microprocessors has increased very rapidly. In fact, the complexity, defined by the number of devices on an individual integrated circuit chip, has approximately double each year over this time span. The concept of device scaling has been consistently applied over many technology generations, resulting in consistent improvement in both device density and performance. Device dimensions are now well below the micrometer scale and into the nanometer regime. Nonstationary transport properties for III–V semiconductors in sub-micron samples are determined by ensemble Monte Carlo method in this work. In present work, a non-stationary transport model called modified Drift-Diffusion (MDD) model, in which transient transport properties that depend on electric field, position and initial distribution are used, is built. And MDD is used to modeling sub-micron device, such as very narrow base heterojunction bipolar transistors, in this work. In additional, impact ionization, which is another key factor in sub-micron device arising by local high electric field, is also included in our model. Using ensemble Monte Carlo simulator coupled with Poisson solver, high frequency noise behavior due to current fluctuation and shot noise suppression in very short devices are studied.