Reliability and mode behavior of aluminum gallium arsenide-gallium arsenide-indium gallium arsenide quantum well heterostructure lasers.

摘要

Data are presented on oxide-confined Al_xGa_1−xAs-GaAs quantum well heterostructures with oxide-Al_xGa_1−xAs distributed Bragg reflectors for electromagnetic confinement, showing the full range of reliability after 5+ years of hydrolyzation in ambient conditions of atmospheric water vapor and temperature. The evaluation after 5+ years shows that a quick “sealing” oxidation prevents destructive hydrolyzation.; Data are presented on current-injected and photopumped vertical cavity surface emitting lasers. Transverse mode behavior depends upon the length of the cavity and the tailoring of the ends due to the scattering method used at the Fabry-Perot interface.; Data are presented on ten-stripe Al_xGa_1−xAs-GaAs-In _yGa_1−yAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al₂O₃ polishing compound or 10-μm diameter Al powder results in increased current threshold and spatial and spectral broadening.