Design of a high temperature fully differential CMOS amplifier in silicon-on-insulator.

摘要

This thesis presents the design, simulation, layout and testing results for a general purpose fully differential amplifier. It was designed to operate over a wide temperature range of 25°C to 225°C. The amplifier was fabricated in XI10-1mum Silicon-on-Insulator (SOI) process which is qualified to withstand high temperature operation. The external controllability of the input and the output common-mode feedbacks made the amplifier stable for operating conditions up to 225°C. Measured data demonstrated the amplifier's proper stability and rail-to-rail signal capabilities over the entire temperature range. A second version of the fully differential amplifier was designed to provide a more robust circuitry.