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Circuit and CAD Solutions for Optimal SRAM Design in Nanoscale CMOS.

机译:纳米CMOS中用于SRAM优化设计的电路和CAD解决方案。

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摘要

Conventional SRAM design involves balancing trade-offs among several critical metrics---yield, power, performance and area. Worsening variation makes scaling the 6T bitcell difficult, especially due to the need to balance the trade-offs between various metrics. In particular, lowering the SRAM voltage for low-power, while maintaining functionality, is challenging. Several solutions have been proposed to ensure continued SRAM scaling at the process, circuit, and architectural levels. Exploring this vast design space to zero in on an optimal design thus becomes challenging. This dissertation makes the following contributions to ensure continued scaling of SRAM.;First, we present bitcells that use asymmetric sizing of the cross-coupled inverter to improve read stability. Further, these bitcells can use sizing as an effective knob to improve stability and to trade-off leakage power, read performance, writability, and area. An improvement in cell stability ensures scalability of SRAM to lower voltages for lower power, while maintaining acceptable levels of functional yield.;Second, due to the DC assumptions of conventional static metrics, they are either optimistic or pessimistic in predicting cell failure. The static metrics predict cell failure only by considering variation, while there are several other factors involved in the dynamics of a write operation that can cause failure. So, we define Dynamic write-limited VMIN for an SRAM that is based on TWL-CRIT, a dynamic writability metric. DWVMIN takes into account several other factors that can cause write failure and is a more accurate value of the lowest operating voltage for write-limited SRAMs.;Finally, the burgeoning SRAM design space has led to a designer productivity crisis. Thus, to improve productivity and enable a rapid and early exploration of the design space, we propose the Virtual Prototyping tool. For any technology, ViPro produces an optimal base-case SRAM prototype, metric trade-off curves, and breakdown among various components. The designer can then iteratively explore the design space to reach an optimal design. The Technology Agnostic Simulation Environment component of ViPro can be used as a stand-alone tool to port circuit analysis across technologies.
机译:常规的SRAM设计需要在多个关键指标(产量,功耗,性能和面积)之间权衡取舍。变化的加剧使6T比特单元的缩放变得困难,特别是由于需要在各种指标之间权衡取舍。特别是在保持功能性的同时降低SRAM电压以实现低功耗是一项挑战。已经提出了几种解决方案,以确保在过程,电路和体系结构级别上持续进行SRAM缩放。因此,要在最佳设计中探索这种巨大的设计空间,将其归零是一项挑战。本文为确保SRAM的连续缩放做出了以下贡献。首先,我们提出了使用交叉耦合反相器的不对称大小来提高读取稳定性的位单元。此外,这些位单元可以使用大小调整作为有效的旋钮,以提高稳定性并权衡泄漏功率,读取性能,可写性和面积。单元稳定性的提高确保了SRAM可扩展到较低电压以降低功耗,同时保持可接受的功能良率。其次,由于常规静态指标的DC假设,它们在预测单元故障方面要么乐观要么悲观。静态指标仅通过考虑变化来预测单元故障,而写操作的动态过程中还涉及其他一些因素,这些因素可能会导致故障。因此,我们为基于TWL-CRIT(一种动态可写性指标)的SRAM定义了动态写限制VMIN。 DWVMIN考虑了其他可能导致写故障的因素,并且是写限制SRAM的最低工作电压的更准确值。最后,迅速发展的SRAM设计空间导致了设计人员的生产率危机。因此,为了提高生产率并能够快速及早地探索设计空间,我们提出了虚拟原型工具。对于任何技术,ViPro都能生成最佳的基本案例SRAM原型,度量折衷曲线以及各种组件之间的故障。然后,设计人员可以迭代地探索设计空间以达到最佳设计。 ViPro的技术不可知论仿真环境组件可以用作独立工具来移植跨技术的电路分析。

著录项

  • 作者

    Nalam, Satyanand.;

  • 作者单位

    University of Virginia.;

  • 授予单位 University of Virginia.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 137 p.
  • 总页数 137
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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