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Controlling atomistic processes on lead films via quantum size effects and lattice rotation.

机译:通过量子尺寸效应和晶格旋转控制铅膜上的原子过程。

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摘要

Pb depositions on top of Pb(111)/Si(111) films with heights 4 and 5 layers at 40 K show up to a factor of 60 difference in island density. This large difference in nucleation properties between the two films is caused by differences in the critical island size, which in turn is caused by Quantum Size Effects (QSE). The 4-layer film has a critical island size of 1 while the 5-layer film has a critical island size of 5 or larger. This is a remarkable result because even at RT most metals have critical island sizes of 1. In deposition on top of 4- and 5-layer films at 110 K shows that the critical island size is 1 for both films but faster diffusion on the 5-layer films results in a 2 times difference in island density, this too is attributed to QSE. QSE are not the only way to affect the energy and properties of films, lattice rotations between the deposited overlayer and the underlying substrate also have a strong effect. Pb depositions on top of In sqrt(3), In sqrt(31), and In "1x1" results in a multitude of Pb films with different crystal orientations stabilities and morphologies. These experiments show very robust ways to control atomistic processes and the grown nanoscale structures one of the key goals in Nanotechnology.
机译:Pb(111)/ Si(111)薄膜顶部的Pb沉积在40 K下具有4层和5层高度,显示出高达60的岛密度差异。两层薄膜之间成核性质的巨大差异是由临界岛尺寸的差异引起的,而临界岛尺寸的差异又是由量子尺寸效应(QSE)引起的。 4层膜的临界岛尺寸为1,而5层膜的临界岛尺寸为5或更大。这是一个了不起的结果,因为即使在室温下,大多数金属的临界岛尺寸也为1。在4层和5层薄膜的顶部以110 K沉积时,这两种薄膜的临界岛尺寸均为1,但在5层上扩散速度更快多层膜导致岛密度相差2倍,这也归因于QSE。 QSE并不是影响薄膜能量和性能的唯一方法,沉积的外层和下层基板之间的晶格旋转也具有很强的作用。在In sqrt(3),In sqrt(31)和In“ 1x1”顶部沉积Pb会导致大量具有不同晶体取向稳定性和形态的Pb薄膜。这些实验显示了控制原子过程和生长的纳米级结构的非常可靠的方法,这是纳米技术的关键目标之一。

著录项

  • 作者

    Binz, Steven Michael.;

  • 作者单位

    Iowa State University.;

  • 授予单位 Iowa State University.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 156 p.
  • 总页数 156
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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