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Near threshold neutral pion electroproduction at high momentum transfers.

机译:在高动量传递下接近中性介电常数的电产生。

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摘要

Pion photo- (gammap → piN ) and electroproduction (gamma*p → piN) close to threshold have been the subject of experimental and theoretical study since the 1950s. The predictions for near threshold cross sections have been studied for momentum transfers Q 2 1 GeV2/c2 theoretically via the Low Energy Theorems (LETs). Additionally, these LETs give predictions for the axial form factor GA(Q 2) via the charged pion process near threshold. The LETs provide transition amplitude predictions for both neutral and charged pion reactions using chiral symmetry and current algebra arguments near threshold. Previous experimental measurements from Saclay, Mainz and others have shown consistency with the LET predictions at low momentum transfers Q2 1 GeV2/c2.;Recently, new extensions to these LETs at high Q 2 have been introduced by Pobylista et al. (2001) and then by Braun et al. (2008). In the work of Braun et al., the near threshold pion electroproduction transition amplitudes are written in terms of new form factors. These new generalized form factors GpN1 (Q2) and GpN2 (Q2) are obtained on the current quark basis and have been predicted using light cone sum rules (LCSRs) in the chiral limit (mpi → 0) for the reactions ep → eNpi in the Q 2 range of 1 - 10 GeV2/c2. Additionally, the predictions include a prescription to access the axial form factor GA near threshold at these high momentum transfers for the charged pion reaction.;An experiment at Jefferson Lab was conducted using the CLAS detector to measure near threshold neutral pion electroproduction ep → eppi0 as a function of Q 2. This is the first measurement of this process in the near threshold region of W from 1.08 to 1.16 GeV and at momentum transfers Q2 ≈ 2 - 5 GeV2/c2 . The differential angle integrated cross sections were measured and the associated structure functions and S-wave multipoles were extracted. The cross section, extracted multipole amplitudes and generalized form factors Gp0p1 (Q2) and Gp0p2 (Q2) are presented along with the predictions from Braun et al.
机译:自1950年代以来,接近阈值的光子照相(gammap→piN)和电产生(gamma * p→piN)一直是实验和理论研究的主题。理论上已通过低能定理(LET)研究了动量传递Q 2 <1 GeV2 / c2的近阈值截面的预测。此外,这些LET通过接近阈值的带电介子过程给出了轴向形状因子GA(Q 2)的预测。 LET使用手性对称性和阈值附近的当前代数论证为中性和带电介子反应提供跃迁幅度预测。 Saclay,Mainz等人的先前实验测量结果表明,在低动量传递Q2 <1 GeV2 / c2时,LET预测与LET一致。最近,Pobylista等人在高Q 2下引入了对这些LET的新扩展。 (2001年),然后由Braun等人撰写。 (2008)。在Braun等人的工作中,以新的形状因数来写接近阈值的pion电产生过渡幅度。这些新的广义形状因子GpN1(Q2)和GpN2(Q2)是在当前夸克基础上获得的,并已使用手性极限(mpi→0)中的光锥和规则(LCSR)预测了反应ep→eNpi Q 2范围为1-10 GeV2 / c2。此外,这些预测还包括在带电介子反应的这些高动量传递下访问接近阈值的轴向形状因子GA的处方。;在杰斐逊实验室进行的实验使用CLAS检测器测量接近阈值的中性介子电产生ep→eppi0作为这是Q 2的函数。这是在W的接近阈值区域从1.08 GeV到1.16 GeV以及动量传递Q2&ap;处的该过程的首次测量。 2-5 GeV2 / c2。测量了微分角积分截面,并提取了相关的结构函数和S波多极。提出了横截面,提取的多极振幅和广义形状因子Gp0p1(Q2)和Gp0p2(Q2)以及Braun等人的预测。

著录项

  • 作者

    Khetarpal, Puneet Kumar.;

  • 作者单位

    Rensselaer Polytechnic Institute.;

  • 授予单位 Rensselaer Polytechnic Institute.;
  • 学科 Physics Nuclear.
  • 学位 Ph.D.
  • 年度 2010
  • 页码 168 p.
  • 总页数 168
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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