Mesure de l'effet de l'injection de charges par laser sur un circuit oscillant voisin (French text).

摘要

In this work, the effects of a charge injection on a surrounding oscillator have been studied. This charge injection is caused by a laser pulse having sufficient energy to melt the silicon, creating electron hole pairs in the substrate, which diffuse to the surrounding structures. The aim of this work is to develop a measurement technique of those effects, to present the results in a designer-oriented manner and to develop a model that could predict by simulation the observed disturbances on an oscillator.; A measurement system monitoring the frequency change of a ring oscillator is presented. This is coupled to an optical system which measures the in situ reflectivity indicating the onset of the laser irradiation effect. A dedicated integrated circuit based on the architecture of a high precision frequency-to-voltage converter is used as the main circuit in the experiments.; To model such a frequency change, a method, using the theory on linear time-invariant systems, has been developed. Parameters of this mathematical model have been calculated by comparison with experimental results and, finally, the predictive behavior of the model has been tested. (Abstract shortened by UMI.)