Continuum and pore network modeling of preparation of silicon-carbide membranes by chemical-vapor deposition and chemical-vapor infiltration

摘要

Inorganic membranes are of much interest these days for their potential use in high temperature applications. SiC nanoporous membranes, in particular, have important good characteristics which make them appropriate for use in high temperature, steam, acid environments. In this Thesis, we used a CVD/CVI process to prepare flat disk and tubular membranes. We use a time-dependant model to describe the process during membrane preparation and to predict the transport properties of the resulting membranes. We also develop a pore network model of the same membranes to describe the transport of a binary gas mixture through these membranes. Both these models provide a good agreement with the experimental data.