Characterization of EMR sensors over a temperature range from 4K to 300K.

摘要

The purpose of this thesis was the characterization of extraordinary magnetoresistance sensors with homogeneous and localized magnetic fields in terms of magnetic field sensitivity. Characterization was at temperatures that extended from 4 K to 300 K and at RT, respectively. Under homogeneous fields, magnetoresistive sensitivity of 26 O/kOe at 130 K with an applied current of 10 muA was obtained. The characterization with localized fields was the first experimental study of its type. The localized field was applied by a magnetic probe that swept the device to which a current of 60 muA was applied to the device. The magnetoresistive sensitivity obtained was around 16 O/kOe, however this effect was believed to be convolved with a capacitive signal. Therefore, further studies on the real effect of the localized field to EMR devices were performed.