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Novel techniques of RF high power measurement.

机译:射频大功率测量的新技术。

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摘要

RF diagnostic systems provide essential parameters for both statistical process control (SPC) and automated process control (APC) in plasma based semiconductor and flat panel processing driven at RF frequencies. To achieve repeatability and control of RF plasma processes such as plasma-enhanced chemical vapor deposition (PECVD) and plasma etching (PE) it has become necessary to accurately (<1%) monitor and control the actual plasma impedance and RF power delivered to the plasma. This thesis is based on the design and test of novel RF power instrumentation that is accurate even with RF powers in the range of tens of kilowatts.;The trend in RF process is to go to two extremes: very high frequency (>200 MHz) and high power (>50 KW) (large area flat panels). Industry requirements are already 50kW at 13.56 MHz and up to 200 MHz in frequency. There are emerging applications reported at even higher frequency (915 MHz ISM band).;Today's state of the art instruments can measure RF power with 1% accuracy at its best; typical accuracy is around 3% and it is rapidly degrading with the increase in Voltage Standing Wave Ratio (VSWR) due to unmatched loads. My thesis research proved that by using a proper digital correction algorithm better then 1% RF measurement accuracy could be obtained. An improved power measurement technique for real impedance lines and loads is presented along with test results at powers up to 3kW. For the case of RF power measurements into complex impedances I tested an entirely novel direct digital sampling method that is frequency agile.;Finally I contributed to the art of RF calorimeters as well as more accurate RF measurements. Absolute accuracy of the RF metrology is compounded by errors introduced primarily from the measurement system, the chosen calibration method and power references. RF high power standards are not traceable directly to primary metrology references provided by NIST. In order to improve the calibration accuracy of the instruments, I researched novel calibration techniques and determined the errors involved in the RF high power calibration methods.
机译:RF诊断系统为基于等离子体的半导体和以RF频率驱动的平板处理中的统计过程控制(SPC)和自动化过程控制(APC)提供了基本参数。为了实现可重复性和控制RF等离子体工艺(例如等离子体增强化学气相沉积(PECVD)和等离子体蚀刻(PE)),必须准确地(<1%)监视和控制传递给传感器的实际等离子体阻抗和RF功率。等离子体。本论文基于新型RF功率仪器的设计和测试,即使在数十千瓦的RF功率范围内,该仪器也是准确的。RF工艺的趋势趋于两个极端:非常高的频率(> 200 MHz)大功率(> 50 KW)(大面积平板)。行业要求在13.56 MHz时已达到50kW,在频率上高达200 MHz。据报道,出现了更高频率(915 MHz ISM频段)的新兴应用。当今最先进的仪器可以以最高1%的精度测量RF功率;典型的精度约为3%,并且由于负载不匹配而随电压驻波比(VSWR)的增加而迅速下降。我的论文研究证明,通过使用适当的数字校正算法,RF测量精度可以达到1%。提出了一种针对实际阻抗线路和负载的改进的功率测量技术,以及功率高达3kW时的测试结果。对于将RF功率测量到复杂阻抗的情况,我测试了一种全新的频率捷变直接数字采样方法。最后,我为RF量热仪的技术以及更精确的RF测量做出了贡献。射频计量的绝对精度主要由测量系统,所选的校准方法和功率基准所引入的误差所加重。射频高功率标准不能直接追溯到NIST提供的主要计量参考。为了提高仪器的校准精度,我研究了新颖的校准技术并确定了RF大功率校准方法中涉及的误差。

著录项

  • 作者

    Stan, Ovidiu Daniel.;

  • 作者单位

    Colorado State University.;

  • 授予单位 Colorado State University.;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 172 p.
  • 总页数 172
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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