Programmable Metallization Cell memory for flexible electronics.

摘要

Programmable Metallization Cell (PMC) memory is a non-volatile memory which stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between two electrodes. This research demonstrates that PMC memory is capable of being integrated into flexible electronics. Most flexible electronics systems are fabricated on flexible polymer substrates, which are incompatible with standard semiconductor fabrication temperatures and chemicals. However, PMC devices are fabricated by depositing and patterning materials that are gaining acceptance in standard semiconductor manufacturing facilities; are fabricated at lower temperatures compared to other devices; have mechanical characteristics comparable with those of flexible polymer substrates; and, are patterned using chemistries compatible with flexible substrates. This thesis describes the development of fabrication processes for PMC devices that are compatible with flexible substrates and the characterization of these devices when subjected to mechanical stress, which shows that these devices are likely to perform better than conventional memory devices when flexed.