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Interface governed magnetostrictionin ultra thin CoFe and Fe films

机译:CoFfee和Fe薄膜中界面控制的磁致伸缩

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摘要

Two different types of polycrystalline films, films with low (Fe) and films with high (Co_(50)Fe_(50)) saturation magnetostriction lambda _s were sandwiched between Cu to study the thickness dependence of lambda _s in Cu/X/Cu system. We utilised a new method (ROTMOKE) for a high accurate H_k determination. The values for lambda _s were determined by analysing the change of K_k during application of compressive and tensile stress by cylindrical bending of the substratejoint with the film. For both systems, a remarkable contribution of the interface to the lambda _s was found. The sign of the interface contribution is opposed to the sign of bulk lambda _s leading to a zero transition of lambda _s. For Fe this transition occurs at a thickness of 5 nm whereas for the CoFe film with a strong lambda _s value of the bulk of around 80 centre dot 10~(-6) a transition was extrapolated at a thickness around 1 nm.
机译:将两种不同类型的多晶膜,低(Fe)膜和高(Co_(50)Fe_(50))饱和磁致伸缩λ_s膜夹在Cu之间,以研究Cu / X / Cu体系中λ_s的厚度依赖性。我们利用一种新方法(ROTMOKE)进行高精度的H_k测定。 λ_s的值是通过分析在施加压缩应力和拉伸应力的过程中K_k的变化来确定的,该压缩应力和拉伸应力是通过与膜连接的基底的圆柱弯曲而实现的。对于这两个系统,都发现接口对lambda _s的显着贡献。界面贡献的符号与导致_s过渡为零的整体lambda _s的符号相反。对于Fe,该跃迁发生在5 nm的厚度处,而对于具有强λ_s值的大约80个中心点10〜(-6)的CoFe膜,则在1 nm左右的厚度处推断出跃迁。

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