Deposition of Polycrystalline ZnO Films by Two-Step Method and Characterization of Thermal Annealing Effects

摘要

Polycrystalline ZnO thin films were deposited on SiO_2/Si(100) substrate using RF magnetron sputtering. The film deposition performed in this work was composed of following two procedures; the 1st-deposition for 30 min without oxygen at 100 W and the 2nd-deposition with oxygen in the range O_2/(Ar+O_2) = 10～50 %. Deposited ZnO films revealed a strongly c-axis preferred-orientation (the corresponding texture coefficient ～ 100 %) as well as a high resistivity (> 10~7 Ωcm). It was also observed that the crystallite size of ZnO was noticeably increased by thermal-annealing.