首页> 外文会议>Symposium on Chemical Aspects of Electronic Ceramics Processing November 30-December 4, 1997, Boston, Massachusetts, U.S.A. >Investigation on the growth mechanism of zinc oxide film perpared by electrochemical method
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Investigation on the growth mechanism of zinc oxide film perpared by electrochemical method

机译:电化学法制备氧化锌薄膜的生长机理研究

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摘要

ZnO thin films were potentiostatically deposited on Ito electrode in 0.1 M Zn(NO_3)_2 and the film growth mechanism was investigated by using FTIR and electrochemical quartz crystal microbalance (EQCM). Intermediates formed in the inital stage were identified as soluble zinc hydroxides and a critical concentration of OH was required for the ZnO to be deposited. A rapid growth rate of ZnO film observed in the presence of O_2 was attributed to the higher cathodic current which produces OH~-.
机译:在Ito电极上以0.1 M Zn(NO_3)_2稳定地沉积ZnO薄膜,并利用FTIR和电化学石英晶体微量天平(EQCM)研究了膜生长机理。初始阶段形成的中间体被鉴定为可溶的氢氧化锌,并且需要临界浓度的OH才能沉积ZnO。在O_2存在下观察到的ZnO膜的快速生长速率归因于产生OH〜-的较高阴极电流。

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