首页> 外文会议>Solid-state sensor, actuator, and microsystems workshop >A BAROMETRIC PRESSURE SENSOR WITHINTEGRATED REFERENCE PRESSURE CONTROL USING LOCALIZED CVD
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A BAROMETRIC PRESSURE SENSOR WITHINTEGRATED REFERENCE PRESSURE CONTROL USING LOCALIZED CVD

机译:使用局部CVD的带有集成参考压力控制的气压计压力传感器

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This paper reports a barometric pressure sensor withintegrated reference pressure control. The device was packaged ina cavity, which was created using anodic bonding andsubsequently vacuum sealed using localized CVD (ChemicalVapor Deposition) at near ambient temperature. A post-packagingpressure control system, which consisted of in-cavity pressuremonitoring and pressure control units, was incorporated with thebarometric pressure sensors. The sensor modules, with embeddedcomb resonators and gettering heaters, were fabricated using adouble-polysilicon dissolved-wafer process. The wafers wereanodically bonded, thinned, and then released in EDP. LocalizedCVD was then used to seal the cavity and to react away theresidual gas within it using the getters to create the desiredreference pressure, as measured using the in-cavity resonators.This implementation required very little extra design space, andonly one additional mask compared to the sensor alone. Processimprovements have reduced the sealing time and power by a factorof four compared to that previously reported [1]. Sensors capableof resolving 25mTorr pressure changes with a sensitivity of~60fF/Torr were obtained.
机译:本文报告了集成参考压力控制的大气压力传感器。将该器件封装在空腔中,该空腔使用阳极键合制成,然后在接近环境温度的条件下使用局部CVD(化学气相沉积)进行真空密封。包装后的压力控制系统由腔内压力监测和压力控制单元组成,与气压计传感器组合在一起。带有嵌入式梳状谐振器和吸气加热器的传感器模块采用双多晶硅溶解晶片工艺制造。将晶片阳极键合,变薄,然后在EDP中释放。然后使用局部CVD密封腔体并使用吸气剂反应掉腔体内的残留气体,以产生所需的参考压力(如使用腔内谐振器测量的那样)。这种实现方式几乎不需要额外的设计空间,与之相比仅需要一个额外的掩模传感器本身。与以前的报道相比,工艺改进将密封时间和功率降低了四倍[1]。获得了能够解决25mTorr压力变化且灵敏度约为60fF / Torr的传感器。

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