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Control of crystal phase in Fe/Si films by using thin film Zone Melting Crystallization

机译:通过薄膜区域熔融结晶控制Fe / Si薄膜中的晶相

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摘要

For the development of a new solar cell material, β-iron silicide (β-FeS_2) films were fabricated by using the following two techniques involving the thin film Zone Melting Crystallization (ZMC) method. First, β-FeSi_2 was formed by post-annealing ZMC films composed of α-FeSi_2. The phase transition from α-FeSi_2 to β-FeSi_2 was induced by the post-annealing and promoted with Cu. Second, β-FeSi_2 was directly formed from the melt without post-annealing by adjusting the power of upper and lower heaters in the ZMC. Results showed that (1) crystal phase of the Fe/Si films could be controlled by adjusting the power of each heater in the ZMC, (2) Cu promoted formation of β-FeSi_2 from amorphous in addition to promoting phase transition from α-FeSi_2 to β-FeSi_2, and (3) crystal phase of ZMC films depended on the dispersion of Cu in the films.
机译:为了开发新的太阳能电池材料,通过使用以下两种涉及薄膜区域熔化结晶(ZMC)方法的技术来制造β-硅化铁(β-FeS_2)膜。首先,通过后退火由α-FeSi_2组成的ZMC膜来形成β-FeSi_2。后退火引起从α-FeSi_2到β-FeSi_2的相变,并被Cu促进。其次,通过调节ZMC中上下加热器的功率,无需后退火即可直接从熔体中形成β-FeSi_2。结果表明:(1)可以通过调节ZMC中每个加热器的功率来控制Fe / Si膜的晶相;(2)Cu除了促进α-FeSi_2的相变外,还促进了非晶态β-FeSi_2的形成。 β-FeSi_2,β-FeSi_2和(3)ZMC膜的晶相取决于Cu在膜中的分散。

著录项

  • 来源
    《Solid state-general》|2008年|93-103|共11页
  • 会议地点 Honolulu HI(US);Honolulu HI(US);Honolulu HI(US)
  • 作者单位

    Research Center for Carbon Recycling and Energy, Tokyo Institute of Technology, Tokyo, Japan;

    Research Center for Carbon Recycling and Energy, Tokyo Institute of Technology, Tokyo, Japan;

    Research Center for Carbon Recycling and Energy, Tokyo Institute of Technology, Tokyo, Japan;

    Research Center for Carbon Recycling and Energy, Tokyo Institute of Technology, Tokyo, Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料一般性问题;
  • 关键词

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