Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
rnState Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
rnKey Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of;
etching; chemical treatment; KOH; AlGaN;
机译:在浓盐酸溶液中选择性湿蚀刻Al_(0.7)Ga_(0.3)As层以剥离GaAs微尖端
机译:使用KOH溶液中的湿法化学蚀刻制备的具有ZnO纳米壁的倒置有机太阳能电池
机译:在KOH溶液中湿法化学蚀刻AlN
机译:KOH溶液中的AL_(0.65)GA_(0.35)N的湿化学蚀刻
机译:I.水溶液中汞电极上一氧化二氮和亚硝酸的电化学二。铁(III)和铁(II)的2,2'-联吡啶络合物的电化学和水解动力学;多种铁络合物的电化学动力学参数。三,铀(IV)-水溶液(氧化氘)中铀(IV)-乙撑双氨基乙酸复合物的质子核磁共振研究
机译:KOH溶液中Si的一步各向异性湿法腐蚀制备的两层微结构
机译:KOH水溶液中光电化学蚀刻的GAN的表面形态和组成