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Carrier localization in (InGa)(AsN) alloys

机译:(InGa)(AsN)合金中的载流子定位

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We investigate the origin of radiative recombination in (InGa)(AsN)/GaAs single quantum wells by means ofcontinuous wave and time-resolved photoluminescence (PL) measurements. Samples with different indium andnitrogen concentration were investigated. An analysis of the whole set of data for different excitation densitiesand lattice temperatures, T, is reported. This analysis provides insights into radiative and non-radiative processesruling the recombination dynamics and shows the predominant contribution of localized state emission at low T.The nature of these states is further studied by measuring the time necessary (rise time) for their population. Wefind that the PL rise time in (InGa)(AsN) is independent of temperature and detection energy, thus being notconclusive about the origin of the states involved in the emission processes. On the contrary, magneto-PLmeasurements show that the shift of the PL peak energy induced by a magnetic field, B, decreases sizably andchanges its dependence on B from linear to quadratic when going from low to high temperature. Thiscounterintuitive result shows that radiative recombination at low temperature (T<100 K) is not excitonic,contrary to previous assignments, and is due to loosely bound electron-hole pairs in which one carrier islocalized by N-induced potential fluctuations and the other carrier is delocalized.
机译:我们通过连续波和时间分辨光致发光(PL)测量研究(InGa)(AsN)/ GaAs单量子阱中辐射复合的起源。研究了具有不同铟和氮浓度的样品。报告了对不同激发密度和晶格温度T的整套数据的分析。该分析提供了调控重组动力学的辐射和非辐射过程的见解,并显示了低T下局部态发射的主要贡献。通过测量其种群所需的时间(上升时间)进一步研究了这些态的性质。我们发现(InGa)(AsN)中的PL上升时间与温度和检测能量无关,因此对于与发射过程有关的状态的起源尚无定论。相反,磁-PL测量表明,当从低温到高温时,磁场B感应的PL峰值能量的移动会明显减小,并且其对B的依赖性从线性变为二次方。违反直觉的结果表明,低温(T <100 K)时的辐射复合不是激子复合,与先前的分配相反,这是由于电子-空穴对的松散结合,其中一个载流子被N诱导的电势波动局限,另一个载流子被定位。本地化。

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