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Understanding Microstructural Effects on Long Term Electrical Fatigue in Multilayer PZT Actuators

机译:了解多层PZT执行器中长期疲劳的微观结构影响

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In this study, multilayered PbZr_xTi_(1-x)O_3 (PZT) samples were produced by tape-casting and subsequent sintering at temperatures in the range of 1175 ℃ to 1325 ℃. Sintering times were 6 minutes and 24 minutes. Samples were poled and also electrically fatigued by long-term exposure ( ≈ 10~6 cycles) to cyclic electric fields. The parameters of initial and remnant polarization were estimated from hysteresis loops. Changes in the crystallographic microstructure as a function of sintering temperature T_S and sintering time were examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD) to gain insight on fatigue mechanisms and their prevention. The microstructural results, such as domain reorientation and amount of secondary phases, explained the results of electrical observations. We found that grain sizes and internal strains were major influence factors on device performance. Domain sizes were about two orders of magnitude smaller than grain sizes. Therefore, domain-grain wall interaction did not influence domain switching. Domain wall movement was facilitated in samples processed at T_S less than 1250 ℃, and such samples were more resistant to electrical fatigue. Samples degraded faster at TS above 1250 ℃, but here a higher device performance power was found due to an increased unit cell tetragonality that yielded higher polarization values.
机译:在这项研究中,通过流延铸造和随后在1175℃至1325℃的温度下烧结,生产了多层PbZr_xTi_(1-x)O_3(PZT)样品。烧结时间分别为6分钟和24分钟。样品被极化,并且由于长期暴露于循环电场(≈10〜6个循环)而产生电疲劳。根据磁滞回线估算初始和剩余极化的参数。通过扫描电子显微镜(SEM)和X射线衍射(XRD)检验了晶体结构的变化与烧结温度T_S和烧结时间的关系,以了解疲劳机理及其预防方法。微观结构的结果,例如畴取向和次级相的数量,解释了电观察的结果。我们发现晶粒尺寸和内部应变是影响器件性能的主要因素。畴尺寸比晶粒尺寸小大约两个数量级。因此,域-谷物墙交互不会影响域切换。在T_S低于1250℃的样品中促进了畴壁的移动,并且这些样品更具耐电疲劳性。样品在高于1250℃的TS处降解更快,但由于单位晶格的四方性增加而产生更高的极化值,因此发现了更高的器件性能。

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