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Material and Electrical Properties of Hole-Trapping Memory Capacitors Composed of nc-ITO Embedded ZrHfO High-k Films

机译:nc-ITO嵌入式ZrHfO高k膜构成的空穴陷阱存储电容器的材料和电性能

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摘要

The material and electrical properties of MOS memory capacitors composed of single- and dual-layer nc-ITO embedded ZrHfO high-k films have been investigated. The dual-layer nc-ITO embedded sample shows a higher charge trapping density than the single-layer nc-ITO embedded sample does. The formation of an interface layer at the nc-ITO and ZrHfO contact region is confirmed by XPS analysis. The memory function is mainly based on trapping holes at both the bulk and interface of the nc-ITO site. The frequency-dependent C-V and G-V results indicate that parts of holes are loosely trapped at the nc-ITO/ZrHfO interfaces. The hole-trapping and -detrapping phenomena are also confirmed from the J-V measurements.
机译:研究了由单层和双层nc-ITO嵌入ZrHfO高k膜组成的MOS存储电容器的材料和电性能。双层nc-ITO嵌入的样品显示出比单层nc-ITO嵌入的样品更高的电荷俘获密度。 XPS分析证实了在nc-ITO和ZrHfO接触区域形成界面层。记忆功能主要是基于在nc-ITO位置的主体和界面处都捕获孔。随频率变化的C-V和G-V结果表明,部分孔被松散地捕获在nc-ITO / ZrHfO界面处。空穴俘获和负俘获现象也从J-V测量中得到证实。

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