SIMULATION ON THE EFFECT OF HALO IMPLANTATION PRECISION ON THE PERFORMANCE OF 36NM NMOSFET DEVICE

摘要

Continued challenge for higher-performance semiconductor device increasingly requires the precise controlled dopant and ion beam angular properties. Considering the Halo implant process characteristics with strict requirement to dapant control, in this paper Halo implant process is regarded as an example to continue to study implant effect to the key device parameters such as Vt, Idsat, Ion, Ioff of extra low junction devices. A NMOSFET with 36nm technology is simulated by ilvaco TCAD tools according to the device requirement of ITRS (International Technology Roadmap for Semiconductors) 2006 Update to study the effect. The TCAD simulation builds the visible elationship between device and ion implant process. The results of Simulation show halo implant process in 36nm NMOS devices is very sensitive to dose and beam angle aviation and their shift arose the shift of device electrics characteristics. Higher precision requirement is indispensable for continuous improvement to Ion Implanters.