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A Micro Amperometric Immunosensor Based on MEMS

机译:基于MEMS的微安培免疫传感器

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A micro amperometric immunosensor with the sensitive area of only 1 mm~2 was fabricated on silicon using the technique of Micro-Electro-Mechanical Systems (MEMS). A double exposure of SU-8 photoresist process was developed to create both the sensitive pool and reaction pool. Antibody was immobilized via cross-linking with glutaraldehyde on the sensitive area of the electrode surface, which was electropolymerized with polypyrrole previously. The immunosensor was characterized by detection of human immunoglobulin G (HIgG). The immunosensor displayed a good linear response to HIgG concentrations between 5 ng/ml and 255 ng/ml and demonstrated a fast response time of 3 minutes.
机译:利用微机电系统(MEMS)技术,在硅片上制作了只有1mm〜2的敏感区域的微安培免疫传感器。开发了SU-8光刻胶工艺的两次曝光以创建敏感池和反应池。通过与戊二醛交联将抗体固定在电极表面的敏感区域,该电极先前已与聚吡咯进行电聚合。免疫传感器的特征在于检测人免疫球蛋白G(HIgG)。免疫传感器对Hng浓度在5 ng / ml和255 ng / ml之间显示出良好的线性响应,并显示3分钟的快速响应时间。

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