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Measurement of the Energy-Band Relations of Stabilized Si Photoanodes Using Operando Ambient Pressure X-ray Photoelectron Spectroscopy

机译:使用Operando环境压力X射线光电子能谱法测量稳定的Si光阳极的能带关系

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摘要

The energy-band relations and electronic properties for the light-absorber/protection-layer stack of TiO_2-stabilized Si photoanodes have been determined by ambient pressure x-ray synchrotron radiation photoelectron spectroscopy under an applied potential (operando), from single core-level emission lines. The experiments have also been complemented with laboratory-based monochromatic XPS data. Electrochemical parameters are additionally derived directly from x-ray photoemission data, and a method is presented to derive interface-state densities from such operando data.
机译:TiO_2稳定的Si光电阳极的光吸收/保护层堆叠的能带关系和电子性质已通过环境压力x射线同步加速器辐射光电子能谱在施加电势(操作数)下从单核级确定发射线。实验还得到了基于实验室的单色XPS数据的补充。电化学参数还直接从X射线光发射数据中得出,并提出了一种从此类操作数据中得出界面态密度的方法。

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  • 会议地点 Chicago IL(US)
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    Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125, USA;

    Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125, USA,Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125, USA;

    Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125, USA,Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125, USA;

    Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

    Surface Science Division, Materials Science Department, Darmstadt University of Technology, 64287 Darmstadt, Germany;

    Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

    Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125, USA,Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

    Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125, USA,Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

    Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

    Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125, USA,Beckman Institute, California Institute of Technology, Pasadena, CA 91125, USA;

    Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125, USA,Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125, USA,Beckman Institute, California Institute of Technology, Pasadena, CA 91125, USA,Kavli Nanoscience Institute, California Institute of Technology, Pasadena, CA 91125, USA;

    Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China,School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China;

    Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125, USA;

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