首页> 外文会议>Processes at the semiconductor solution interface 5 >Preliminary Investigations of Ta Surface Chemistry in Aqueous Solutions of TeO_2, and the Possible Formation of TaTe_2
【24h】

Preliminary Investigations of Ta Surface Chemistry in Aqueous Solutions of TeO_2, and the Possible Formation of TaTe_2

机译:TeO_2水溶液中Ta表面化学性质及TaTe_2可能形成的初步研究

获取原文
获取原文并翻译 | 示例

摘要

Reductive removal of Ta oxide electrochemically was studied using Cyclic Voltammetry (CV), in-situ electrochemical scanning tunneling microscopy (EC-STM), and X-ray photoelectron spectroscopy (XPS). From CVs, it was shown that the longer a Ta electrode was maintained at negative potentials in excess of-1.5 V, the more surface oxide was reduced, as evidenced by increases in hydrogen evolution. Atomically-resolved EC-STM images were obtained after reduction at -1.8 V, and then imaging at -1.0 V. The efficacy of using Te to passivate the Ta surface was also investigated, and Te appeared to suppress oxide formation, as evidenced by EC-STM, CVs and XPS. Images of the Ta surface in a TeO_2 solution suggested the formation of TaTe_2 at the surface.
机译:使用循环伏安法(CV),原位电化学扫描隧道显微镜(EC-STM)和X射线光电子能谱(XPS)对电化学还原Ta氧化物进行了研究。从CVs可以看出,Ta电极在负电势超过-1.5 V时保持的时间越长,表面氧化物的还原越多,这由氢释放的增加所证明。在-1.8 V电压下还原后获得原子分辨的EC-STM图像,然后在-1.0 V电压下成像。还研究了使用Te钝化Ta表面的功效,并且EC似乎可以抑制Te的形成。 -STM,CV和XPS。 TeO_2溶液中Ta表面的图像表明TaTe_2在表面形成。

著录项

  • 来源
  • 会议地点 Toronto(CA)
  • 作者单位

    Department of Chemistry, University of Georgia, Athens, Georgia 30602, USA;

    Department of Chemistry, University of Georgia, Athens, Georgia 30602, USA;

    Department of Chemistry, University of Georgia, Athens, Georgia 30602, USA;

    Department of Chemistry, University of Georgia, Athens, Georgia 30602, USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号