A MODEL OF THE REMOVAL RATE WHILE INTER METAL DIELECTRICS CHEMICAL MECHANICAL PLANARIZATION

摘要

In this paper, a model was set up to simulate the removal rate while Inter Metal Dielectrics (IMD) Chemical Mechanical Planarization (CMP). Due to the metal pattern, the CMP removal rate of patterned wafers will be much faster than that of blanket wafers, which is a function of pattern density (PD). This is a linear simulation, which matches very well with the experimental results. It can be applied on calculating polishing time for the CMP process.