EPITAXIAL TRANSPARENT CONDUCTING OXIDE FILMS BY PLD

摘要

Novel transparent conducting oxides (TCOs) are required for a new generation of optoelectronic devices including higher performance photovoltaic and display devices. We have employed pulsed laser deposition (PLD) to explore performance limits and fundamental properties of n- and p-type materials. We report here on results for n-type materials in the ZnSnO_x and In_2O_3:Mo oxide systems and on CuInO_2:Ca as a p-type material. Key results for the n-type materials have been the observation of higher mobilities, doping levels and conductivities in amorphous ZnSnO_3 and epitaxial films of Zn_2SnO_4 and the observation of very high mobilities (125 cm~2/Vsec) along with excellent transparency ( > 90%) in the Mo-doped In_2O_3. For the p-type materials, we have obtained improved conductivities in Ca-doped CuInO_2 (0.06 Ω~(-1) cm~(-1)). PLD is shown to be a powerful technique for establishing performance limits for TCOs.