Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer

摘要

Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), is increasingly used in organic non-volatile memory devices, e.g., in ferroelectric field effect transistors (FeFETs). Here, we report on FeFETs integrating nano-imprinted arrays of P(VDF-TrFE) nanowires. Two previously-unreported architectures are tested, the first one consisting of stacked P(VDF-TrFE) nanowires placed over a continuous semiconducting polymer film; the second one consisting of a nanostriped blend layer wherein the semiconducting and ferroelectric components alternate regularly. The devices exhibit significant reversible memory effects, with operating voltages reduced compared to their continuous film equivalent, and with different possible geometries of the channels of free charge carriers accumulating in the semiconductor.