首页> 外文会议>Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lethmann >Ellipsometric Porosimetry : Fast and Non Destructive Technique for Characterization of Porous Low-K; Highlights on Plasma Damage and Water Effect on Treated Materials
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Ellipsometric Porosimetry : Fast and Non Destructive Technique for Characterization of Porous Low-K; Highlights on Plasma Damage and Water Effect on Treated Materials

机译:椭偏孔隙率法:表征多孔低K的快速无损技术;等离子体损伤和水对处理材料的影响的重点

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Ellipsometric porosimetry (EP) is a non contact, non destructive approach based on a spectroscopic ellipsometric (SE) measurement which allows the precise determination of the refractive indices and thicknesses of the porous films. EP combined spectroscopic ellipsometric technique with a suitably adapted adsorption chamber. EP accords the great advantage of performing an in situ fast spectroscopic ellipsometric measurement at each stabilized pressure interval. From this combination, we can obtain morphological information such as open and closed porosity, pore size distribution, etc for thin films with an excellent sensitivity. In this paper we will focus on a SiOCH porous low-K sample. Using EP we will demonstrate that it is a porous hydrophobic material.We will then study the effect of plasma treatment on the material. The damaged layer will be characterized. By using water as an absorptive, we will be able to demonstrate the water degradation effect on treated materials.
机译:椭偏孔隙率法(EP)是一种基于光谱椭偏(SE)测量的非接触,非破坏性方法,可精确确定多孔膜的折射率和厚度。 EP将椭圆偏振光谱技术与适合的吸附室相结合。 EP具有在每个稳定的压力间隔执行原位快速光谱椭偏测量的巨大优势。从这种组合中,我们可以获得具有优异灵敏度的薄膜的形态信息,例如开孔和闭孔,孔径分布等。在本文中,我们将重点研究SiOCH多孔低K样品。使用EP我们将证明它是一种多孔疏水材料,然后我们将研究等离子体处理对该材料的影响。损坏的层将被表征。通过使用水作为吸收剂,我们将能够证明水对处理过的材料的降解作用。

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