Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA;
Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151 -742, Republic of Korea;
Department of Electrical and Computer Engineering, University of California, Davis, CA 95616, USA;
Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151 -742, Republic of Korea;
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA;
Optoelectronics; integrated circuit; silicon compatibility; metal-oxide-semiconductor field-effect transistor; optical interconnect; photodetector; optical switching;
机译:射频应用硅纳米线MOSFET的寄生效应研究和设计优化
机译:光学存储介质的优化设计可实现驱动器兼容性
机译:基于绝缘体上硅的光通信波长下的多孔硅微腔的设计,分析和优化
机译:具有硅兼容性的光学驱动异构MOSFET的设计优化
机译:碳化硅短沟道功率DMOSFET:优化设计
机译:P型门 - 全面硅纳米线MOSFET的低温传输特性
机译:硅上高速双层石墨烯光学调制器设计优化