首页> 外文会议>Physics of Medical Imaging pt.2; Progress in Biomedical Optics and Imaging; vol.8 no.29; Proceedings of SPIE-The International Society for Optical Engineering; vol.6510 pt.2 >Effect of Multiple Dopants on the Quantum Efficiency of LiF Thermoluminescent Dosimeters (TLD) and BaFX (X = Br,Cl,I) Storage Phosphors
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Effect of Multiple Dopants on the Quantum Efficiency of LiF Thermoluminescent Dosimeters (TLD) and BaFX (X = Br,Cl,I) Storage Phosphors

机译:多种掺杂剂对LiF热发光剂量计(TLD)和BaFX(X = Br,Cl,I)储存荧光粉的量子效率的影响

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The radiant quantum efficiency (RQE) of x-ray phosphors is defined as the ratio of the emitted luminescent power and the power absorbed by the material. For a given x-ray imaging technique, a high RQE phosphor means a lower x-ray exposure to patients and a better image quality. To improve RQE, phosphors such as LiF and BaFX:Eu (X = Br, Cl, I) host lattices, which are commonly used in medical dosimetry and imaging system, are always doped with Cu, Ti, or Tb. Experimental observations showed that these dopants can increase phosphor RQE significantly. In this study, we theoretically investigated the effect of additional dopants on the RQE of LiF:Mg and BaFX:Eu host lattices using Density Functional Theory (DFT) in the Local Density Approximation (LDA). Self-consistent charge density calculations were performed. The energy loss function L(w) was obtained and used to calculate the RQE for different phosphors. The results showed that additional dopants produced changes in the optical properties of the phosphors, particularly the energy loss function L(w). Doping with more substitutional impurities increased the RQE of all host lattices except the BaFI lattice where the RQE decreased.
机译:X射线荧光粉的辐射量子效率(RQE)定义为发射的发光功率与材料吸收的功率之比。对于给定的X射线成像技术,高RQE磷光体意味着对患者的X射线曝光量更低,并且图像质量更好。为了提高RQE,通常在医疗剂量和成像系统中使用的磷光体(例如LiF和BaFX:Eu(X = Br,Cl,I)主晶格)始终掺杂有Cu,Ti或Tb。实验观察表明,这些掺杂剂可以显着提高磷光体的RQE。在这项研究中,我们在局部密度近似(LDA)中使用密度泛函理论(DFT)从理论上研究了其他掺杂剂对LiF:Mg和BaFX:Eu主晶格的RQE的影响。进行了自洽电荷密度计算。获得能量损失函数L(w),并将其用于计算不同磷光体的RQE。结果表明,额外的掺杂剂改变了磷光体的光学性质,特别是能量损失函数L(w)。掺杂更多的取代杂质会增加所有主晶格的RQE,但BaFI晶格的RQE会降低。

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