A straightforward method to prepare chalcopyrite CIGS films by one-step sputtering process without extra Se supply

摘要

Chalcopyrite Cu(In, Ga)Se2 (CIGS) films were directly fabricated by using one-step sputtering from a single quaternary target even without extra Se supply during deposition or post selenization treatment. Structural and electrical properties have been investigated. Cu2-xSe phase was usually observed in the as-deposited samples. However, such second phase could be removed by KCN treatment. Our results showed that the CIGS absorber layer prepared by our one-step sputtering process exhibited columnar structure with (112) preferred orientation and the device revealed an efficiency of 8.01%.