Higher Junction Temperature in Power Modules – a demand fromhybrid cars, a potential for the next step increase in power density for various Variable Speed Drives

摘要

Removing the barrier of maximum junction temperature at 150°C will allow a significant increase inrnpower density or simplified cooling. The barrier is set by solder fatigue and wire bond lift off at intermittentrnoperation. New Packaging technologies can eliminate the reliability issue. Future IGBT generationsrnwill take advantage of the progress in packaging and will show major improvements based onrnSilicon. For the application of higher temperatures in power electronics, special concern is on PCB’srnand passives. When spatial temperature profiles of heat sinks are taken into account, those componentsrncan stay within their limits.