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Phase behavior of polymer blend materials for polystyrene-bpolycarbonate (PS-b-PC) block copolymers and corresponding homopolymer polystyrene

机译:聚苯乙烯-聚碳酸酯(PS-b-PC)嵌段共聚物和相应的均聚物聚苯乙烯的聚合物共混材料的相行为

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摘要

Block copolymer directed self-assembly (DSA) is a promising technique to print Contact Holes/Vias with polymer blendmaterials or block copolymers. Polymer blend material is to mix block copolymer and homopolymer. In this paper, thematerials we use are polymer blend materials with polystyrene-b-polycarbonate (PS-b-PC) block copolymer andcorresponding homopolymer polystyrene. The advantage of polymers is that they do not require complex moleculardesign and can form cylindrical structures as long as the proportions are right. The polymer can be mixed and usedimmediately without waiting time. Based on the PS-b-PC which can form a stable lamellar structure, we achieve acontrollable cylindrical structure by mixing the two materials and controlling the concentration. After multiplecomparison experiments, the phase segregation results of PS-b-PC with PS ratio of 2:1 and 1.5:1 were better, with thediameter about 12.7nm and 14.1nm, and the pitch about 20nm and 22.7nm, respectively.
机译:嵌段共聚物定向自组装(DSA)是一种有前途的技术,可以使用聚合物共混物或嵌段共聚物印刷接触孔/孔。聚合物共混材料是将嵌段共聚物和均聚物混合。在本文中,我们使用的材料是具有聚苯乙烯-b-聚碳酸酯(PS-b-PC)嵌段共聚物和相应的均聚物聚苯乙烯的聚合物共混材料。聚合物的优点是它们不需要复杂的分子设计,只要比例合适就可以形成圆柱结构。可以立即混合使用聚合物,而无需等待时间。在可以形成稳定的层状结构的PS-b-PC的基础上,我们通过混合两种材料并控制浓度来实现可控的圆柱形结构。经过多次对比实验,PS比为2:1和1.5:1的PS-b-PC的相分离结果更好,直径约为12.7nm和14.1nm,间距约为20nm。和22.7nm。

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    Integrated Circuit Advanced Process Center Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), No. 3 Beitucheng West Road, Beijing 100029, China University of Chinese Academy of Sciences, No. 19(A), Yuquan Road, Beijing 100049, China;

    Integrated Circuit Advanced Process Center Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), No. 3 Beitucheng West Road, Beijing 100029, China College of Big Date and Information Engineering, Guizhou University, Guiyang 550025, China;

    Integrated Circuit Advanced Process Center Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), No. 3 Beitucheng West Road, Beijing 100029, China;

    Integrated Circuit Advanced Process Center Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), No. 3 Beitucheng West Road, Beijing 100029, China;

    Integrated Circuit Advanced Process Center Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), No. 3 Beitucheng West Road, Beijing 100029, China University of Chinese Academy of Sciences, No. 19(A), Yuquan Road, Beijing 100049, China weiyayi@ime.ac.cn;

    Jiangsu HanTop Photo-Materials Co.,Ltd, Floor4-5,Buliding No.9, No.1158 Zhongxin Rd, Shanghai,P.R.China.;

    Jiangsu HanTop Photo-Materials Co.,Ltd, Floor4-5,Buliding No.9, No.1158 Zhongxin Rd, Shanghai,P.R.China.;

    Jiangsu HanTop Photo-Materials Co.,Ltd, Floor4-5,Buliding No.9, No.1158 Zhongxin Rd, Shanghai,P.R.China.;

    Jiangsu HanTop Photo-Materials Co.,Ltd, Floor4-5,Buliding No.9, No.1158 Zhongxin Rd, Shanghai,P.R.China.;

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