首页> 外文会议>Organic Field-Effect Transistors VI; Proceedings of SPIE-The International Society for Optical Engineering; vol.6658 >Transfer Printing as a Method for Fabricating Hybrid Devices on Flexible Substrates
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Transfer Printing as a Method for Fabricating Hybrid Devices on Flexible Substrates

机译:转移印刷作为在柔性基板上制造混合器件的方法

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Printing methods are becoming important in the fabrication of flexible electronics. A transfer printing method has been developed for the fabrication of organic thin-film transistors (OTFT), capacitors, resistors and inductors onto plastic substrates. The method relies primarily on differential adhesion for the transfer of a printable layer from a transfer substrate to a device substrate. A range of materials applications is illustrated, including metals, organic semiconductors, organic dielectrics, nanotube and nanowire mats, a patterned inorganic semiconductor and graphene. Transfer printing can be used to create complex structures including many disparate materials sequentially printed onto the flexible substrate, with no mixed processing steps performed on the device substrate. Specifically, the fabrication and performance of model OTFT devices consisting of a polyethylene terephthalate (PET) substrate, gold (Au) gate and source/drain electrodes, a poly(methyl methacrylate) (PMMA) dielectric layer and either a pentacene (Pn) or a poly(3-hexylthiophene) (P3HT) organic semiconductor layer will be presented. These transfer printed OTFTs on plastic outperform non-printed devices on a Si substrate with a SiO_2 dielectric layer (SiO_2VSi). Transfer printed Pn OTFTs on a plastic substrate have exhibited mobilities of 0.237 cm~2/Vs, compared to non-printed Pn OTFTs on a SiO_2/Si substrate with mobilities of 0.1 cm~2/Vs. Transfer printed P3HT TFTs on a plastic substrate have exhibited mobilites of 0.04 cm~2/Vs, compared to non-printed P3HT TFTs on a SiO_2/Si substrate with mobilities of 0.007 cm~2/Vs.
机译:在柔性电子产品的制造中,印刷方法变得越来越重要。已经开发了一种转移印刷方法,用于在塑料基板上制造有机薄膜晶体管(OTFT),电容器,电阻器和电感器。该方法主要依赖于差异粘合,以将可印刷层从转移基底转移到器件基底。举例说明了一系列材料应用,包括金属,有机半导体,有机电介质,纳米管和纳米线垫,带图案的无机半导体和石墨烯。转移印刷可用于产生复杂的结构,包括依次印刷在柔性基板上的许多不同的材料,而无需在器件基板上执行混合处理步骤。具体来说,OTFT模型设备的制造和性能由聚对苯二甲酸乙二酯(PET)衬底,金(Au)栅电极和源/漏电极,聚甲基丙烯酸甲酯(PMMA)介电层和并五苯(Pn)或将提出一种聚(3-己基噻吩)(P3HT)有机半导体层。这些在塑料上的转移印刷OTFT优于具有SiO_2介电层(SiO_2VSi)的Si基板上的非印刷器件。与在SiO 2 / Si衬底上具有0.1cm 2 / Vs迁移率的非印刷Pn OTFT相比,在塑料衬底上的转移印刷Pn OTFT具有0.237cm 2 / Vs的迁移率。与在SiO_2 / Si基板上的非印刷P3HT TFT的迁移率为0.007 cm〜2 / Vs相比,在塑料基板上的转移印刷的P3HT TFT的迁移率为0.04 cm〜2 / Vs。

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