ULTRATHIN OXIDE FILMS FOR ADVANCED GATE DIELECTRICS APPLICATIONS Current Progress and Future Challenges

摘要

The paper reviews current status and future scientific and technological issues of ultrathin gate dielectrics on silicon based devices. We address fundamental limits for SiO_2 gate oxide scaling below 2 nm, in particular gate leakage, oxide reliability with respect to dielectric breakdown, reduced channel mobility and integration and manufacturing issues. We will further discuss ways the properties of conventional SiO_2 gate oxide can be improved, specifically by (ⅰ) nitrogen incorporation, and (ⅱ) processing in deuterated ambient. Finally, a new area of advanced dielectrics with high permittivity (so called high-K dielectrics) will be covered.