首页> 外文会议>Microwave Conference Proceedings (APMC), 2011 Asia-Pacific >An L-band SiGe HBT reflection-type phase shifter using active loads with varactor-tuned LC-resonators and RC-feedback circuits
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An L-band SiGe HBT reflection-type phase shifter using active loads with varactor-tuned LC-resonators and RC-feedback circuits

机译:L波段SiGe HBT反射型移相器,使用带有变容二极管调谐LC谐振器和RC反馈电路的有源负载

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A new reflection-type phase shifter using active loads is presented. The active load is based on a common-emitter configuration employing varactor-tuned LC-resonators in the load circuit and parallel RC circuits in the series feedback circuit. The varactor-tuned LC-resonator provides a wide relative phase shift and the RC-feedback circuit produces negative impedances for improving an insertion loss variation. The implemented phase shifter using Si varactor diodes with a capacitance ratio of 2.5:1 and SiGe HBTs with an ft of 25GHz has achieved a maximal relative phase shift of 256°, an insertion loss variation less than 3dB and return losses better than 9dB at 1GHz.
机译:提出了一种利用有源负载的新型反射型移相器。有源负载基于共射极配置,在负载电路中采用了变容二极管调谐的LC谐振器,在串联反馈电路中采用了并联RC电路。变容二极管调谐的LC谐振器提供较宽的相对相移,而RC反馈电路产生负阻抗,以改善插入损耗的变化。使用电容比为2.5:1的Si变容二极管和ft为25GHz的SiGe HBT实施的移相器实现了256°的最大相对相移,在1GHz时插入损耗变化小于3dB,回波损耗优于9dB 。

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