Chemical bevelling and SIMS linescan analysis of low energy boron implanted silicon

摘要

High magnification bevels were produced in samples of low energy boron implanted silicon by chemical etching.Reproducible etching results were obtained for a range of doses for 1 ke V implanted annealed and non-annealed samples.Implant profiles of boron were obtained by linescanning along the bevel and depth calibrating the measurements using light interference surface profiling.The results were found to be in very good agreement with low energy Secondary Ion Mass Spectrometry depth profiles.