首页> 外文会议>Microscopy of semiconducting materials 1999 >Clustering of vacancies on {113} planes in Si layers close to Si-Si_3N_4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation
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Clustering of vacancies on {113} planes in Si layers close to Si-Si_3N_4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation

机译:Si层中靠近Si-Si_3N_4界面的Si层中{113}面上空位的聚集以及电子辐照过程中空位簇内部自填隙的进一步聚集

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摘要

In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si_3N_4 films was carried out in a JEOL-4000EX microscope,operated at 400 keV at room temperature.It is found that clustering of vacancies on {113} planes is realised in a Si layer close to the Si-Si_3N_4 interface at the initial stage of irradiation.Further aggregation of self-interstitials insside vacancy clusters is considered as an alternative way of point defect recombination in extended shape.to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.
机译:在室温下以400 keV工作的JEOL-4000EX显微镜对(110)覆盖有Si_3N_4薄膜的FZ-Si晶体进行了原位HREM辐照,发现在{113}面上实现了空位的聚集在辐照的初始阶段,Si层靠近Si-Si_3N_4界面。自填隙团簇中自填隙的进一步聚集被认为是扩展缺陷形状的点缺陷重组的另一种方法,可以通过形成扩展缺陷来实现间隙过饱和时的间隙类型。

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