Cathodoluminescence study of low-dimensional quantum structures grown on patterned GaAs(311)A substrates

摘要

Molecular beam epitaxy on patterned GaAs(311)A substrates exhibits unique growth selectivity allowing the preparation of dense quantum wire arrays and coupled wire-dot structures.The temperature dependence of the cathodoluminescence contrast of a stacked quantum wire array with sub-micron periodicity reveals non-radiative recombination channels and a lateral as well as vertical exciton escape out of the wire regions as loss mechanisms in the range between 5 and 300K.Electronic coupling in wire-dot structures is established by spatially and spectrally resolved cathodoluminescence.