Cathodoluminescence studies of individual GaN dots grown by MOCVD on SiC substrates

摘要

We have investigated the structural and optical properties of free-standing GaN dots,grown on AlGaN barriers using metal-organic vapour deposition on SiC substrates.We have used high resolution scanning electron microscopy to study the size and position of the dots and cathodoluminescence imaging to study their optical properties.In our investigation we have been able to study the emission of individual dots.