Strain Measurement by Local Diffraction: NanoBeam Electron Diffraction (NBED) Compared to Convergent Beam (CBED) and Dark Holography

机译：通过局部衍射测量应变：纳米束电子衍射（NBED）与会聚束（CBED）和暗全息术的比较

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来源
《International Metallographic Society Annual meeting;Microscopy Society of America Annual Meeting;Microanalysis Society Annual meeting》|2011年|1068-1069|共2页
会议地点 Nashville TN(US)
作者
J.L. Rouviere; A. Beche; T. Denneulin; D. Cooper;
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作者单位

CEA INAC, SP2M, LEMMA Minatec, 17 rue des Martyrs Grenoble, F-38054, France;

rnnow at FEI Company, Eindhoven, Netherlands;

rnCEA, LETI, Minatec, 17 rue des Martyrs Grenoble, F-38054, France;

rnCEA, LETI, Minatec, 17 rue des Martyrs Grenoble, F-38054, France;

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专利

1. Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography [J] . A. Beche, J.L Rouviere, J.P. Barnes Ultramicroscopy . 2013,第Null期

机译：纳米级应变测量：会聚束电子衍射，纳米束电子衍射，高分辨率成像和暗场电子全息术的比较
2. Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution [J] . David Cooper, rnArmand Beche, rnJean Michel Hartmann, Semiconductor science and technology . 2010,第9期

机译：通过暗场电子全息图和纳米分辨率的纳米束电子衍射对半导体行业进行应变映射
3. Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction [J] . Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono Journal of Crystal Growth . 2000,第1a3期

机译：利用会聚束电子衍射测量半导体器件中的局部晶格应变
4. Strain measurement for the semiconductor industry with nm-scale resolution by dark field electron holography and nanobeam electron diffraction [C] . Cooper D., Beche A., Hartmann J.M., 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization . 2011

机译：暗场电子全息和纳米束电子衍射在纳米级分辨率下测量半导体行业的应变
5. Measurement of lattice strain and relaxation effects in strained silicon using x -ray diffraction and convergent beam electron diffraction [D] . Diercks, David Robert. 2007

机译：使用X射线衍射和会聚光束电子衍射测量应变硅的晶格应变和弛豫效应
6. Sensitivity of quantitative symmetry measurement algorithms for convergent beam electron diffraction technique [O] . Hyeongsub So, Ro Woon Lee, Sung Taek Hong, 2021

机译：收敛光束电子衍射技术定量对称测量算法的敏感性
7. Strain Measurement by Local Diffraction: NanoBeam Electron Diffraction (NBED) Compared to Convergent Beam (CBED) and Dark Holography [O] . J Rouvière, A Béché, T Denneulin, 2011

机译：通过局部衍射的应变测量：与收敛梁（CBE）和暗全息术相比，纳米束电子衍射（NBED）

Strain Measurement by Local Diffraction: NanoBeam Electron Diffraction (NBED) Compared to Convergent Beam (CBED) and Dark Holography

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