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Why does the hkl: h+k+l = 4n+2 reflections reveal intensity in Si 110?

机译：为什么hkl：h + k + 1 = 4n + 2反射显示出Si中的强度110？

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《Microscopy Society of America annual meeting;Microscopy Society of Canada annual meeting;Societe de Microscopie du Canada annual meeting;Microbeam Analysis Society annual meeting;International Metallographic Society annual meeting》|2002年|1-2|共2页
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P. Geuens; C.B. Carter; D. Van Dyck;
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中图分类观察、分析晶体结构的实验方法;
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1. A comparative density-functional theory investigation of oxygen adsorption on stepped Ni surfaces 3(hkl) × (111) [hkl = (111); (100); (110)]: Role of terrace orientation [J] . Zhang W.-B., Chen C., Xie H.-Q. Journal of the Physical Society of Japan . 2013,第7期

机译：氧在阶梯状Ni表面3（hkl）×（111）上的比较密度泛函理论研究[hkl =（111）; （100）; （110）]：露台定向的作用
2. A significant relation between seismic activities and reflection intensities in the Japan Trench region - art. no. 1100 [J] . Fujie G., Kasahara J., Hino R., Geophysical Research Letters . 2002,第7期

机译：日本海沟地区地震活动与反射强度之间的重要关系-艺术没有。 1100
3. Electrochemical behaviour of amino acids on Pt(hkl). A voltammetric and in situ FTIR study Part IV. Serine and alanine on Pt(100) and Pt(110) [J] . F. Huerta, E. Morallon, J. L. Vazquez, Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry . 1999,第1期

机译：氨基酸在Pt（hkl）上的电化学行为。伏安和原位FTIR研究第四部分。 Pt（100）和Pt（110）上的丝氨酸和丙氨酸
4. Why does the hkl: h+k+l = 4n+2 reflections reveal intensity in Si 110? [C] . P. Geuens, C.B. Carter, D. Van Dyck Microscopy Society of America annual meeting . 2002

机译：为什么HKL：H + K + L = 4N + 2反射揭示了SI的强度110？
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