Very low frequency noise characterization of semiconductor devices using DC parameter analyzers

摘要

This paper discusses in detail how standard bench-top semiconductor parameter analyzers can be used for characterizing low frequency noise of semiconductor devices. We demonstrate that flicker noise of MOSFETs and bipolar transistors can be characterized without any additional instrumentation hardware such as low-noise amplifier, filters, or signal analyzer. Moreover, this new approach allows independent simultaneous noise assessment at multiple device terminals down to very low frequencies (milli-Herz and lower), and enables noise characterization at much lower device currents (sub-nA) than generally reachable with conventional flicker noise measurement systems.