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Bad vias are the cause for electrical test yield losses after plastic chip assembly

机译:不良通孔是塑料芯片组装后电气测试良率损失的原因

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Abstract: Faulty interlevel metal contacts are already a well known yield limiting factor in wafer processing. Yield losses at electrical wafer probe test due to single via fails have been reported several times. However, some of the latent via faults will pass the electrical wafer probe test undetected, but can fail in assembly or in real life. This will be quite expensive for the manufacturer. It is a must to prevent such bad vias or at least to detect them very early in the wafer manufacturing process to improve the 'time to money' situation for the IC-industry. The novel of this paper is a loss of function of single interlevel metal contacts during plastic packaging. This influences the final electrical test yield after packaging operation, while the electrical wafer probe test yield remains unaffected. Root cause analysis indicated that an interaction of different mechanisms led to this phenomenon. !4
机译:摘要:层间金属接触不良已经是晶圆加工中众所周知的产量限制因素。多次报道了由于单通孔失败而导致的电晶片探针测试中的良率损失。但是,某些潜在的通孔故障将通过未检测到的电子晶圆探针测试,但可能会在组装或现实生活中失败。对于制造商而言,这将是相当昂贵的。必须防止这种不良的通孔,或者至少在晶圆制造过程的早期就检测出它们,以改善IC行业的“省钱时间”情况。本文的新颖之处在于塑料包装过程中单个层间金属触点的功能丧失。这会影响包装操作后的最终电气测试成品率,而晶圆晶片探针的测试成品率则保持不变。根本原因分析表明,不同机制的相互作用导致了这种现象。 !4

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