Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37212, USA;
Department of Chemistry, Vanderbilt University, Nashville, TN 37212, USA,Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, TN 37212, USA;
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37212, USA;
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37212, USA;
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37212, USA;
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37212, USA;
quantum dot; X-ray; gamma ray; high energy photon; porous silicon; radiation; photo-ionization;
机译:纳米结构多孔硅膜中量子点的固定化:双模光学生物传感的表征和信号放大。
机译:界面氧化物对多孔硅支架中单层CdTe / CdS量子点光学性能的影响
机译:II-VI胶体量子点掺杂多孔硅微腔的光学性质
机译:None
机译:多孔硅的X射线激发光学发光和化学性质
机译:量子点/多孔硅光学生物传感器检测细粒棘球antigen抗原
机译:生物传感器:纳米结构多孔硅膜中量子点的固定化:双模光学生物化的特征和信号放大(ADV。Funct。Mater。29/2013)