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Effects of X-ray and Gamma-ray Irradiation on the Optical Properties of Quantum Dots Immobilized in Porous Silicon

机译:X射线和γ射线辐照对固定在多孔硅中量子点光学性质的影响

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摘要

The effects of X-ray and gamma irradiation on the optical properties of CdTe/CdS quantum dots (QDs) immobilized in a functionalized porous silicon film have been investigated via continuous wave and time-resolved photoluminescence measurements. Carrier lifetimes of the QDs and photoluminescence intensities decrease with increasing exposure dose from 500 krad(SiO_2) to 16 Mrad(SiO_2).
机译:通过连续波和时间分辨光致发光测量,研究了X射线和伽马射线辐照对固定在功能化多孔硅膜中的CdTe / CdS量子点(QD)光学性能的影响。量子点的载流子寿命和光致发光强度随着曝光剂量从500 krad(SiO_2)到16 Mrad(SiO_2)的增加而降低。

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